TEOS has been widely used in integrated circuit manufacturing
operations to form silicon dioxide films. These conformal films are
generated upon the molecular decomposition of TEOS at elevated temperatures
and reduced pressures (LPCVD) or at lower temperatures in Plasma Enhanced
and Atmospheric Pressure reactors (PECVD, APCVD).
TEOS is typically used for undoped and doped interlayer
dielectrics, intermetal dielectrics, sidewall spacers and trench filling
applications. TEOS is a stable, non-pyrophoric, non-corrosive liquid,
and thereby is a preferable alternative to current processing techniques
employing silane or dichlorosilane compounds. The high purity level
of our ULSI Grade TEOS is preserved by supplying this material directly
to the application in our stainless steel delivery systems.
Trimethylphosphite
(TMP)
Application:
Trimethylphosphite is an organic phosphorus ester
compound which has been widely used as a phosphorus source in the
deposition of doped silicate glasses. Phosphorus and boron act as
glass flow temperature modifiers. The softening temperature of BPSG
films is modulated by varying concentrations of doping constituents.
The phosphorus source of doped glass has traditionally been phosphine.
Trimethylphosphite has gained significant acceptance
in these applications because of the ease of handling a liquid source,
less health hazards, improved purity levels, and improved performance
characteristics. Phosphine is a highly dangerous compound which also
creates step coverage problems when depositing phosphorus doped silicate
glasses. Trimethyphosphite is a liquid at room temperature and has
a relatively high vapor pressure that allows for bubbling with a carrier
gas, or vacuum processing.
Trimethylborate
(TMB)
Application:
Trimethylborate is an organic borate ester compound
which has been widely used as a boron source in the deposition of
doped silicate glasses in low pressure and plasma enhanced CVD. Boron
and Phosphorus act as glass flow temperature modifiers. The softening
temperature of silicate glasses is modified with varying concentrations
of doping constituents. The boron source for doped silicate glasses
has traditionally been diborane.
Trimethylborate has gained significant acceptance
in these applications. Benefits of TMB include the ease of handling
a liquid source,less health hazards, improved purity levels, and improved
performance characteristics. TMB is a liquid at room temperature and
has a relatively high vapor pressure that allows for bubbling with
a carrier gas, vacuum processing or direct liquid injection.
Triethylborate
(TEB)
Application:
Triethylborate is an organic borate ester compound
which can be used as a boron source in the deposition of doped silicate
glasses in low pressure and plasma enhanced CVD. Boron and phosphorus
act as glass flow temperature modifiers. The softening temperature
of silicate glasses is modified by varying concentrations of doping
constituents. The boron source for doped silicate glasses has traditionally
been diborane. Triethylborate has been considered as a replacement
for diborane and Trimethylborate. Benefits of TEB include the ease
of handling a liquid source, less health hazards, improved purity
levels and improved performance characteristics over diborane. TEB
is a Liquid at room temperature and pressure and has a relatively
high vapor pressure that allows for bubbling with a carrier gas or
vacuum processing.
Triethylphosphate
(TEPO)
Application:
TEPO is an organic phosphorus ester compound which
has been used as a phosphorus source in the deposition of doped silicate
glasses. Phosphorus and boron act as glass flow temperature modifiers.
The softening temperature of silicate glasses is modified with varying
concentrations of doping constituents. The phosphorus source for doped
silicate glasses has traditionally been phosphine. TEPO has been considered
as a replacement for phosphine, Trimethylphosphite (TMP), and Triethylphosphite
(TEP). Benefits of TEPO over phosphine include the ease of handling
a liquid source, less health hazards, improved purity levels and improved
performance characteristics. TEPO is a liquid at room temperature
and pressure and has a low vapor pressure that almost requires bubbling
with a carrier gas.
1,1,1-Trichloroethane
(TCA)
Application:
Trichloroethane is a chlorinated hydrocarbon that
has gained wide acceptance in the semiconductor industry as a liquid
source substitute for cylinder Hydrogen Chloride (HCI) gas. HCI gas
and TCA are used as chlorine sources for thermal oxidation of silicon
and for furnace tube cleaning. TCA has become the recognized industry
alternative for cylinder HCI gas. The benefits of TCA include improved
purity levels, low pressure applications, significantly less safety
hazards, ease of handling a liquid source, and TCA is non-corrosive
to process equipment.
Phosphorus
Oxychloride (POCl3)
Application:
Phosphorus Oxychloride applications range from MOS
and Bipolar dopant processing to glass doping in the fiber optics
industry. POCI3 is the industry standard for N-type doping requirements.
For years gaseous Phosphine (PH3) was used as the predominant phosphorus
source. Phosphine, however, has significant process control difficulties
due to impurity levels and water generation upon decomposition reaction.
Phosphorous Oxychloride has significantly displaced Phosphine as the
phosphorous source due to the ease of handling liquid source, high
purity levels, dry decomposition chemistry, and overall process control
capabilities.
